JPH0358179B2 - - Google Patents
Info
- Publication number
- JPH0358179B2 JPH0358179B2 JP56154608A JP15460881A JPH0358179B2 JP H0358179 B2 JPH0358179 B2 JP H0358179B2 JP 56154608 A JP56154608 A JP 56154608A JP 15460881 A JP15460881 A JP 15460881A JP H0358179 B2 JPH0358179 B2 JP H0358179B2
- Authority
- JP
- Japan
- Prior art keywords
- resist film
- film
- groove
- grooves
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15460881A JPS5856353A (ja) | 1981-09-29 | 1981-09-29 | アイソレ−シヨンの形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15460881A JPS5856353A (ja) | 1981-09-29 | 1981-09-29 | アイソレ−シヨンの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5856353A JPS5856353A (ja) | 1983-04-04 |
JPH0358179B2 true JPH0358179B2 (en]) | 1991-09-04 |
Family
ID=15587895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15460881A Granted JPS5856353A (ja) | 1981-09-29 | 1981-09-29 | アイソレ−シヨンの形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5856353A (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192706A (en) * | 1990-08-30 | 1993-03-09 | Texas Instruments Incorporated | Method for semiconductor isolation |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53108773A (en) * | 1977-03-04 | 1978-09-21 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
-
1981
- 1981-09-29 JP JP15460881A patent/JPS5856353A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5856353A (ja) | 1983-04-04 |
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